| PART |
Description |
Maker |
| PDV-P9002 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
| PDV-P7002 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
| PDV-P8102 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
| PDV-P8103 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
| PDV-P8104 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
| P873 |
Photoconductive and Photovoltaic Cells
|
Hamamatsu Photonic Systems
|
| PDB-C140 |
Blue Enhanced Photoconductive Silicon Photodiode
|
Advanced Photonix, Inc.
|
| P2288-10NBSP P2288-09NBSP P2288-02NBSP P2288NBSP P |
Photoconductive Infrared Sensor
From old datasheet system
|
Hamamatsu Corp
|
| PDB-C113 |
Blue Enhanced Photoconductive Silicon Photodiode
|
Advanced Photonix
|
| P2750 P2750-06 P2750-08 P3257-30 P3257-31 P3981 P3 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
|
Hamamatsu Corporation
|
